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SDS065J006C3 - SiC Schottky Barrier Diode

Description

VRRM 650 V IF(135℃) 10 A QC 17 nC TO-220-2L PIN 1 PIN 2 CASE Device SDS065J006C3 Package TO-220-2L Marking DS065006C3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) VRRM 650 TC =25℃ Reverse Voltage (Surge peak) VRSM 65

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Datasheet Details

Part number SDS065J006C3
Manufacturer Sanan
File Size 274.23 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet SDS065J006C3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Datasheet SDS065J006C3 650V/6A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low heat dissipation requirements Application ➢ Switching power supply ➢ Power factor correction ➢ Motor drive，traction ➢ Charging pile Product Description VRRM 650 V IF(135℃) 10 A QC 17 nC TO-220-2L PIN 1 PIN 2 CASE Device SDS065J006C3 Package TO-220-2L Marking DS065006C3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) VRRM 650 TC =25℃ Reverse Voltage (Surge peak) VRSM 650 V TC =25℃ Reverse voltage (DC) VDC 650 TC =25℃ 20 TC =25℃ Continuous forward current IF 10 A TC =135℃ 6
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