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SDS065J004D3 - SiC Schottky Barrier Diode

Description

VRRM 650 V IF(135℃) 7 A QC 13 nC TO-252-2L PIN 1 PIN 2 CASE Marking DS065004D3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) VRRM 650 TC =25℃ Reverse Voltage (Surge peak) VRSM 650 V TC =25℃ Reverse voltage (DC) VDC

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Datasheet Details

Part number SDS065J004D3
Manufacturer Sanan
File Size 311.08 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet SDS065J004D3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Datasheet SDS065J004D3 650V/4A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low heat dissipation requirements Application ➢ Switching power supply ➢ Power factor correction ➢ Motor drive，traction ➢ Charging pile Device SDS065J004D3 Package TO-252-2L Product Description VRRM 650 V IF(135℃) 7 A QC 13 nC TO-252-2L PIN 1 PIN 2 CASE Marking DS065004D3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) VRRM 650 TC =25℃ Reverse Voltage (Surge peak) VRSM 650 V TC =25℃ Reverse voltage (DC) VDC 650 TC =25℃ 14 TC =25℃ Continuous forward current IF 7 A TC =135℃ 4
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