DS120010D3 Datasheet - Sanan

DS120010D3 SiC Schottky Barrier Diode

VRRM 1200 V IF(135℃) 17 A QC 55 nC TO-252-2L PIN 1 PIN 2 CASE Marking DS120010D3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) VRRM VRSM VDC Continuous forward current IF .

Datasheet SDS120J010D3 1200V/10A SiC Schottky Barrier Diode Characteristic Zero Reverse Recovery Current Positive temperature coefficient Temperature-independent performance High-speed switching Low switching loss Low heat dissipation requirements Application Switching power supply Power factor correction Motor drive，traction Charging pile Device SDS120J010D3 Package TO-252-2L Product Descri.

DS120010D3 Datasheet (475.36 KB)