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SW3N80C - N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET

Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • TO-220F TO-251 TO-252.
  • High ruggedness.
  • Low RDS(ON) (Typ 3.9Ω)@VGS=10V.
  • Low Gate Charge (Typ 12.5nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

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Datasheet preview – SW3N80C

Datasheet Details

Part number SW3N80C
Manufacturer Samwin
File Size 736.68 KB
Description N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET
Datasheet download datasheet SW3N80C Datasheet
Additional preview pages of the SW3N80C datasheet.

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Full PDF Text Transcription

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SW3N80C N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252  High ruggedness  Low RDS(ON) (Typ 3.9Ω)@VGS=10V  Low Gate Charge (Typ 12.5nC)  Improved dv/dt Capability  100% Avalanche Tested  Application: Industrial power，LED,Adapter 1 23 1 23 2 1 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 800V ID : 3.0A RDS(ON) : 3.
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