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SAMWIN
SW3205
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 0.008 Ω)@VGS=10V ■ Gate Charge (Typ 146nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-220
BVDSS : 55V ID : 110A RDS(ON) : 0.008 ohm
1
2 2 3 1 3
1. Gate 2. Drain 3. Source
General Description
This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize RDS(ON), low gate charge and high rugged avalanche characteristics.