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SW055R06E7T - N-channel MOSFET

Description

1.

This power MOSFET is produced with advanced technology of SAMWIN.

excellent avalanche characteristics.

Features

  • TO-220.
  • High ruggedness.
  • Low RDS(ON) (Typ 5.2mΩ)@VGS=10V.
  • Low Gate Charge (Typ 94nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

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Datasheet Details

Part number SW055R06E7T
Manufacturer Samwin
File Size 573.89 KB
Description N-channel MOSFET
Datasheet download datasheet SW055R06E7T Datasheet

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Full PDF Text Transcription

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SW055R06E7T N-channel Enhanced mode TO-220 MOSFET Features TO-220 ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 5.2mΩ)@VGS=10V ⚫ Low Gate Charge (Typ 94nC) ⚫ Improved dv/dt Capability ⚫ 100% Avalanche Tested ⚫ Application:Synchronous Rectification, Li Battery Protect Board, Inverter General Description 12 3 1. Gate 2.Drain 3.Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes BVDSS : 60V ID : 120A RDS(ON) : 5.
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