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M368L6423ETN-A2 - DDR SDRAM Unbuffered Module

General Description

Pin Name A0 ~ A12 BA0 ~ BA1 DQ0 ~ DQ63 DQS0 ~ DQS8 CK0,CK0 ~ CK2, CK2 CKE0, CKE1(for double banks) CS0, CS1(for double banks) RAS CAS WE CB0 ~ CB7 (for x72 module) Function Address input (Multiplexed) Bank Select Address Data input/output Data Strobe input/output Clock input Clock enable input Chip

Key Features

  • 2 I/O 3 I/O 4 I/O 5 D15 D3/D0/D5 VDDSPD SPD Serial PD SCL WP A0 SA0 A1 SA1 A2 SA2 SDA VREF VSS VDD/VDDQ D11/D8/D13 D0 - D15 D0 - D15 D0 -.

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Other Datasheets by Samsung Semiconductor

Part Number Description
M368L6423ETN-AA DDR SDRAM Unbuffered Module
M368L6423ETN-B0 DDR SDRAM Unbuffered Module
M368L6423ETN-CB3 DDR SDRAM Unbuffered Module
M368L6423ETN-CLB3 DDR SDRAM Unbuffered Module
M368L6523CUS (M368LxxxxCUx) DDR SDRAM Unbuffered Module

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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256MB, 512MB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 256Mb E-die with 64/72-bit ECC/Non ECC Revision 1.1 August. 2003 Rev. 1.1 August. 2003 256MB, 512MB Unbuffered DIMM Revision History Revision 1.0 (April, 2003) - First release Revision 1.1 (August, 2003) - Corrected typo. DDR SDRAM Rev. 1.1 August.