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KM62256DLI-L - 32K x 8 bit Low Power CMOS Static RAM

Download the KM62256DLI-L datasheet PDF. This datasheet also covers the KM62256D variant, as both devices belong to the same 32k x 8 bit low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The KM62256D families are fabricated by SAMSUNG′s advanced CMOS process technology.

The families support various operating temperature ranges and have various package types for user flexibility of system design.

Key Features

  • Process Technology : TFT.
  • Organization : 32Kx8.
  • Power Supply Voltage : 4.5~5.5V.
  • Low Data Retention Voltage : 2V(Min).
  • Three state output and TTL Compatible.
  • Package Type : 28-DIP-600B, 28-SOP-450 28-TSOP1-0813.4 F/R.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KM62256D_Samsung.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
KM62256A 32K X 8-Bit Static RAM Samsung Electronics
KM62256AL 32K X 8-Bit Static RAM Samsung Electronics
KM62256AL-L 32K X 8-Bit Static RAM Samsung Electronics
KM62U256C Low Power AND Low Vcc CMOS Static RAM Samsung semiconductor
KM62U256D Low Power and Low Voltage CMOS Static RAM Samsung semiconductor

Other Datasheets by Samsung Semiconductor

Part Number Description
KM62256DLI 32K x 8 bit Low Power CMOS Static RAM
KM62256DL 32K x 8 bit Low Power CMOS Static RAM
KM62256DL-L 32K x 8 bit Low Power CMOS Static RAM
KM62256D 32K x 8 bit Low Power CMOS Static RAM
KM62256BL 32K x 8-Bit High Speed CMOS Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
KM62256D Family Document Title 32Kx8 bit Low Power CMOS Static RAM Revision History Revision No History 0.0 Initial draft 0.1 First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM62256D-4/5/7 Family tOH = 5 → 10ns - KM62256DL/DLI IDR = 50→30µA KM62256DL-L/DLI-L IDR = 30 → 15µA 1.0 Finalize - Remove ICC write value - Improved operating current ICC2 = 70 → 60mA - Improved standby current KM62256DL/DLI ISB1 = 50 → 30µA KM62256DL-L ISB1 = 10 → 5µA KM62256DLI-L ISB1 = 15 → 5µA - Improved data retention current KM62256DL/DLI IDR = 30 → 5µA KM62256DL-L/DLI-L IDR = 15 → 3µA - Remove 45ns part from commercial product and 100ns part from industrial product.