K9K2G16Q0M Datasheet - Samsung

K9K2G16Q0M, 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revisi.
Offered in 256Mx8bit or 128Mx16bit, the K9K2GXXX0M is 2G bit with spare 64M bit capacity.

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K9K2G16Q0M_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K9K2G16Q0M

Manufacturer:

Samsung

File Size:

641.65 KB

Description:

256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

Features

* Voltage Supply -1.8V device(K9K2GXXQ0M): 1.7V~1.95V -3.3V device(K9XXGXXUXM): 2.7 V ~3.6 V
* Organization - Memory Cell Array -X8 device(K9K2G08X0M) : (256M + 8,192K)bit x 8bit -X16 device(K9K2G16X0M) : (128M + 4,096K)bit x 16bit - Data Register -X8 device(K9K2G08X0M): (2K + 64)bit

Applications

* such as solid state file storage and other portable applications requiring non-volatility. An ultra high density solution having two 2Gb stacked with two chip selects is also available in standard TSOPI package. 3 K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY PI

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K9K2G08Q0M K9K2G08Q0M-P K9K2G08Q0M-PCB0 K9K2G08Q0M-PIB0 K9K2G08Q0M-Y K9K2G08Q0M-YCB0

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K9K2G16Q0M 256M Bit 128M Bit NAND Flash Memory Samsung

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