K4F640412D - 16M x 4bit CMOS Dynamic RAM

Product Overview

Samsung

Datasheet Details

Part number	K4F640412D
Manufacturer	Samsung
File Size	367.96 KB
Description	16M x 4bit CMOS Dynamic RAM
Datasheet	K4F640412D Datasheet
Additional preview pages of the K4F640412D datasheet.

Product details

Description

CMOS DRAM This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs.Fast Page Mode offers high speed random access of memory cells within the same row.Refresh cycle(4K Ref.or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional

Features

of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 16Mx4 Fast Page Mode DRAM family is fabricated using Samsung ′s advanced CMOS process to realize high band-width, low power consumption and high reliability.

📁 Similar Datasheet

K4F641612E - (K4F641612E / K4F661612E) 4M x 16bit CMOS Dynamic RAM (Samsung semiconductor)
K4F661612E - (K4F641612E / K4F661612E) 4M x 16bit CMOS Dynamic RAM (Samsung semiconductor)

Other Datasheets by Samsung

K4F640811B - 8M x 8bit CMOS Dynamic RAM
K4F640812D - 8M x 8bit CMOS Dynamic RAM
K4F641612B - 4M x 16bit CMOS Dynamic RAM
K4F641612C - 4M x 16bit CMOS Dynamic RAM
K4F660412D - 16M x 4bit CMOS Dynamic RAM
K4F660811B - 8M x 8bit CMOS Dynamic RAM

Published: Apr 25, 2005 |