K4F170811D Datasheet - Samsung

K4F170811D 2M x 8Bit CMOS Dynamic RAM

This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package.

K4F170811D Features

* of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 2Mx8 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low pow

K4F170811D_Samsungsemiconductor.pdf