K4E160811D Datasheet (Samsung) - 2M x 8Bit CMOS Dynamic RAM

K4E160811D, 2M x 8Bit CMOS Dynamic RAM

This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs.

Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.

Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref.

or 4K Ref.), access time (-50 or -60), power consum

K4E160811D Features

* of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 2Mx8 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power co