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HED58XXU12 Low Power Hall-Effect Switch

HED58XXU12 Description

SPECIFICATION MODEL : HED58XXU12 Low Power Hall-Effect Switch DRAWN BY CHECKED BY APPROVED BY S.W.PARK 2006.9.19 S.W.KIM 2006.9.19 H.C.JOUNG.
The HED58XXU12 Omnipolar Hall effect sensor IC is fabricated on mixed signal CMOS technology.

HED58XXU12 Applications

* requiring extended operating lifetime in battery powered systems. The output transistor of the HED58XXU12 is switched on (BOP) in the presence of a sufficiently strong South or North magnetic field. The output is switched off (BRP) in the absence of a magnetic field. 2. Specification 2.1 Absolute M

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Datasheet Details

Part number
HED58XXU12
Manufacturer
Samsung
File Size
442.66 KB
Datasheet
HED58XXU12-Samsung.pdf
Description
Low Power Hall-Effect Switch

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Low Power Hall-Effect Switch Samsung
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