MR18R326GAG0 Datasheet (Samsung semiconductor) - (32Mx18) 16pcs RIMM Module based on 576Mb A-die

MR18R326GAG0, (32Mx18) 16pcs RIMM Module based on 576Mb A-die

Signal Pins A1, A3, A5, A7, A9, A11, A13, A15, A17, A19, A21, A23, A25, A27, A29, A31, A33, A39, A52, A60, A62, A64, A66, A68, A70, A72, A74, A76, A78, A80, A82, A84, A86, A88, A90, A92, B1, B3, B5, B7, B9, B11, B13, B15, B17, B19, B21, B23, B25, B27, B29, B31, B33, B39, B52, B60, B62, B64, B66, B68

MR18R326GAG0 Change History Version 1.0 (Mar.

2004) First copy.

Based on the 1.0 ver.

(July 2002) 256/288Mbit D-die RIMM Module Datasheet Page 0 Version 1.0 Mar.

2004 MR18R326GAG0 (32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V Overview The RIMM module is a general purpose high- performance memory module suitable for use in a broad range of applications including computer memory, personal computers, workstations and other applications where hi

MR18R326GAG0 Features

* High speed up to 1066 MHz RDRAM storage

* 184 edge connector pads with 1mm pad spacing

* Module PCB size : 133.35mm x 34.93mm x 1.27mm

* Each RDRAM device has 32 banks, for a total of 512

* Gold plated edge connector pad contacts

* Serial Presence De