MR18R1624GEG0 Datasheet (Samsung semiconductor)

MR18R1624GEG0, Key Timing Parameters

Signal Pins A1, A3, A5, A7, A9, A11, A13, A15, A17, A19, A21, A23, A25, A27, A29, A31, A33, A39, A52, A60, A62, A64, A66, A68, A70, A72, A74, A76, A78, A80, A82, A84, A86, A88, A90, A92, B1, B3, B5, B7, B9, B11, B13, B15, B17, B19, B21, B23, B25, B27, B29, B31, B33, B39, B52, B60, B62, B64, B66, B68

MR16R1624(8/G)EG0 MR18R1624(8/G)EG0 Change History Version 0.1 (December 2003) - Preliminary First copy.

Based on the 1.0 ver.

(July 2002) 256/288Mbit D-die RIMM Module Datasheet www.DataSheet4U.com Version 1.0 (May 2004) Eliminate "Preliminary" Page 0 Version 1.0 May 2004 MR16R1624(8/G)EG0 MR18R1624(8/G)EG0 (16Mx16) 4(8/16)pcs RIMM Module based on 256Mb E-die, 32s banks,16K/32ms Ref, 2.5V (16Mx18) 4(8/16)pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms R

MR18R1624GEG0 Features

* High speed up to 1066 MHz RDRAM storage

* 184 edge connector pads with 1mm pad spacing

* Module PCB size : 133.35mm x 31.75mm x 1.27mm Form Factor The RIMM modules are offered in 184-pad 1mm edge connector pad pitch suitable for 184 contact RIMM connectors. Figure 1 below,