KM68V1000B Datasheet (Samsung semiconductor) - (KM68V1000B / KM68U1000B) 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM

KM68V1000B, (KM68V1000B / KM68U1000B) 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM

The KM68V1000B and KM68U1000B families are fabricated by SAMSUNG′s advanced CMOS process technology.

The families support various operating temperature ranges and have various package types for user flexibility of system design.

The families also support low data retention voltage for battery back-u

KM68V1000B, KM68U1000B Family Document Title 128K x8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No.

History 0.0 1.0 2.0 Initial draft Finalize Revise - Change datasheet format Draft Data Remark August 12, 1995 Preliminary April 12, 1996 March 7, 1998 Final Final The attached datasheets are provided by SAMSUNG Electronics.

SAMSUNG Electronics CO., LTD.

reserve the right to change the specifications and products.

SAMSUNG Electronics will answer to your

KM68V1000B Features

* Process Technology : Poly Load

* Organization : 128Kx8

* Power Supply Voltage : KM68V1000B family : 3.0~3.6V KM68U1000B family : 2.7~3.3V

* Low Data Retention Voltage : 2V(Min)

* Three state output and TTL Compatible

* Package Type : 32-SOP, 32-TSOP1