KM44S32030 Datasheet (Samsung semiconductor) - 8M x 4Bit x 4 Banks Synchronous DRAM

KM44S32030, 8M x 4Bit x 4 Banks Synchronous DRAM

The KM44S32030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clcok

KM44S32030 Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS Latency (2 & 3) -. Burst Length (1, 2, 4, 8) -. Burst Type (Sequential & Interleave)

* All inputs are sampled at