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KM44C4100C - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode

Description

This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs.

Fast Page Mode offers high speed random access of memory cells within the same row.

Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref.

Features

  • of this family. All of this family have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx4 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as main memory for high level computer, microcomputer and personal computer.

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Other Datasheets by Samsung Semiconductor

Part Number Description
KM44C4103C 4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode
KM44C4105C 4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out
KM44C4000C 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
KM44C4003C 4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode
KM44C4005C 4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out

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KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx4 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
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