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KM44C1000D - 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode

Description

This is a family of 1,048,576 x 4bit Fast Page Mode CMOS DRAMs.

Fast Page Mode offers high speed random access of memory cells within the same row.

Features

  • of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, self-refresh operation is available in 3.3V Low power version. This 1Mx4 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as main memory for main frames and mini computers, personal computer and high performance microprocessor systems.

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KM44C256 256k x 4Bit CMOS DRAM Samsung Electronics
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Other Datasheets by Samsung Semiconductor

Part Number Description
KM44C1000B 1M x 4Bit CMOS Dynamic RAM
KM44C1000BJ 1M x 4Bit CMOS Dynamic RAM
KM44C1000BP 1M x 4Bit CMOS Dynamic RAM
KM44C1000BT 1M x 4Bit CMOS Dynamic RAM
KM44C1000BTR 1M x 4Bit CMOS Dynamic RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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KM44C1000D, KM44V1000D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5V or +3.3V), access time (-5, -6 or -7), power consumption(Normal or Low power), and package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, self-refresh operation is available in 3.3V Low power version. This 1Mx4 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
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