KM416S8030 Datasheet - Samsung semiconductor

KM416S8030 2M x 16Bit x 4 Banks Synchronous DRAM

The KM416S8030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clcok.

KM416S8030 Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS Latency (2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave)

* All inputs are

KM416S8030 Datasheet (116.91 KB)