KFH1G16Q2M Datasheet - Samsung semiconductor

KFH1G16Q2M FLASH MEMORY

for below operations -. Reset -. Write Protection -. Burst Read Latency -. Dual Operation -. Invalid block definition and Identification method -. Error in write or read operation -. ECC 3. Revised program sequence 4. Some AC parameters are changed. tACH : 9ns *>7ns, tCES : 7ns *>9ns,.

OneNAND512/OneNAND1GDDP FLASH MEMORY OneNAND SPECIFICATION Density 512Mb Part No. KFG1216Q2M-DEB KFG1216D2M-DEB KFG1216U2M-DIB 1Gb KFH1G16Q2M-DEB VCC(core & IO) 1.8V(1.7V~1.95V) 2.65V(2.4V~2.9V) 3.3V(2.7V~3.6V) 1.8V(1.7V~1.95V) Temperature Extended Extended Industrial Extended PKG 63FBGA(LF) 63FBGA(LF) 63FBGA(LF) N/A www.DataSheet4U.com Version: Ver. 1.4 Date: June 15th, 2005 1 OneNAND512/OneNAND1GDDP FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, .

KFH1G16Q2M Features

* Architecture

* Design Technology: 0.12um

* Voltage Supply - 1.8V device(KFG1216Q2M) : 1.7V~1.95V - 2.65V device(KFG1216D2M) : 2.4V~2.9V - 3.3V device(KFG1216U2M) : 2.7V~3.6V

* Organization - Host Interface:16bit

* Internal BufferRAM(5K Bytes) - 1KB for BootR

KFH1G16Q2M Datasheet (1.30 MB)