KA100O015E-BJTT 2CKE DDP Mobile DDR SDRAM

Samsung semiconductor

Description

Rev.1.0, Jul.2010 KA100O015E-BJTT MCP Specification 4Gb (256M x16) NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS,2CKE DDP Mobile DDR SDRAM datasheet .
The KA100O015E is a Multi Chip Package Memory which combines 4G bit NAND Flash Memory and 4G bit DDP synchronous high data rate Dynamic RAM.

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Datasheet Specifications

Part number: KA100O015E-BJTT
Manufacturer: Samsung semiconductor
File Size: 1.78 MB
Datasheet: KA100O015E-BJTT_Samsungsemiconductor.pdf
Description: 2CKE DDP Mobile DDR SDRAM

Features

* Operating Temperature : -25°C ~ 85°C
* Package : 137-ball FBGA Type - 10.5 x 13 x 1.2mmt, 0.8mm pitch
* Voltage Supply - 1.8V Device : 1.7V ~ 1.95V
* Organization - Memory Cell Array : (256M + 8M) x 16bit for 4Gb (512M + 16M) x 16bit for 8Gb DD

Applications

* where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. For updates or additional information about Samsung products, contact your nearest Samsung office.

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KA100O015E-BJTT 2CKE DDP Mobile DDR SDRAM Samsung semiconductor

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