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K9F5608U0M-YIB0 - 32M x 8 Bit NAND Flash Memory

Product Overview

Samsung semiconductor

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K9F5608U0M-YIB0 32M x 8 Bit NAND Flash Memory by Samsung semiconductor - Datasheet Preview — Datasheet preview – K9F5608U0M-YIB0

Datasheet Details

Part number	K9F5608U0M-YIB0
Manufacturer	Samsung semiconductor
File Size	353.05 KB
Description	32M x 8 Bit NAND Flash Memory
Datasheet	K9F5608U0M-YIB0 Datasheet
Additional preview pages of the K9F5608U0M-YIB0 datasheet.

Product details

Description

- SE is recommended to coupled to GND or Vcc and should not be toggled during reading or programming.

Features

Voltage Supply : 2.7V~3.6V.
Organization - Memory Cell Array : (32M + 1024K)bit x 8bit - Data Register : (512 + 16)bit x8bit.
Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte.
528-Byte Page Read Operation - Random Access : 10µ s(Max. ) - Serial Page Access : 50ns(Min. ).
Fast Write Cycle Time - Program time : 200µ s(Typ. ) - Block Erase Time : 2ms(Typ. ).
Command/Address/Data Multiplexed I/O Port.

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Published: Apr 7, 2005 |