K9F1G16D0M Datasheet (Samsung semiconductor) - 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

K9F1G16D0M, 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

www.DataSheet4U.com K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No History 0.0 1.

Initial issue Draft Date July.

2001 Remark Advance 0.1 1.

Iol(R/B) of 1.8V is changed.

- min.

value : 7mA > 3mA - Typ.

value : 8mA > 4mA Nov.

2001 2.

AC parameter is changed.

tRP(min.) : 30ns > 25ns 3.

A recovery time of minimum 1µs is required before in