K7S1618U4C 512Kx36 & 1Mx18 QDR II b4 SRAM

Samsung semiconductor

Description

K7S1636U4C K7S1618U4C 512Kx36 & 1Mx18 QDRTM II+ b4 SRAM 18Mb QDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant) INFORMATION IN T.
Input Clock Q Valid output Output Echo Clock DLL Disable Address Inputs Data Inputs NOTE Q0-35 W R BW0, BW1,BW2, BW3 VREF ZQ VDD VDDQ VSS TMS TDI TCK.

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Datasheet Specifications

Part number: K7S1618U4C
Manufacturer: Samsung semiconductor
File Size: 415.86 KB
Datasheet: K7S1618U4C_Samsungsemiconductor.pdf
Description: 512Kx36 & 1Mx18 QDR II b4 SRAM

Features

* 1.8V+0.1V/-0.1V Power Supply.
* DLL circuitry for wide output data valid window and future freguency scaling.
* I/O Supply Voltage 1.5V+0.1V/-0.1V
* Separate independent read and write data ports with concurrent read and write operation
* HSTL I/O

Applications

* where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice. ww

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K7S1618U4C 512Kx36 1Mx18 QDR SRAM Samsung semiconductor

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