K7Q163662B - (K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K7Q163662B
Manufacturer	Samsung semiconductor
File Size	362.69 KB
Description	(K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM
Datasheet	K7Q163662B Datasheet
Note	This datasheet PDF includes multiple part numbers: K7Q163662B, K7Q161862B. Please refer to the document for exact specifications by model.
Additional preview pages of the K7Q163662B datasheet.

Product details

Description

Input Clock Input Clocks for Output data Address Inputs Data Inputs 1 NOTE Data Outputs Write Control Read Control Byte Write Control Pin Input Reference Voltage Output Driver Impedance Control Input Power Supply ( 2.5V ) Output Power Supply ( 1.5V or 1.8V ) Ground JTAG Test Mode Select JTAG Test Data Input JTAG Test Clock JTAG Test Data Output No Connect 3 2 Notes: 1. C, C, K or K cannot be set to VREF voltage.2. When ZQ pin is directly connected to VDD output impedance is set to minimum val

Features

1.8V/2.5V +0.1V/-0.1V Power Supply.
I/O Supply Voltage 1.5V +0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O.
Separate independent read and write data ports with concurrent read and write operation.
HSTL I/O.
Full data coherency, providing most current data.
Synchronous pipeline read with self timed early write.
Registered address, control and data input/output.
DDR(Double Data Rate) Interface on read and write.

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Published: Mar 23, 2007 |