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K7N163631B, K7N161831B 512Kx36 & 1Mx18 Pipelined NtRAM

K7N163631B Description

K7N163631B K7N161831B 512Kx36 & 1Mx18 Pipelined NtRAMTM 18Mb NtRAMTM Specification 100TQFP/165FBGA with Pb/Pb-Free (RoHS compliant) INFORMATION IN .
The K7N163631B and K7N161831B are 18,874,368-bits Synchronous Static SRAMs.

K7N163631B Features

* VDD= 2.5 or 3.3V +/- 5% Power Supply.
* Byte Writable Function.
* Enable clock and suspend operation.
* Single READ/WRITE control pin.
* Self-Timed Write Cycle.
* Three Chip Enable for simple depth expansion with no datacontention .
* A inter

K7N163631B Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. www. DataSheet4U. com
* Samsung Electronics reserves the right to change products or specificat

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: K7N163631B, K7N161831B. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
K7N163631B, K7N161831B
Manufacturer
Samsung semiconductor
File Size
603.78 KB
Datasheet
K7N161831B_Samsungsemiconductor.pdf
Description
512Kx36 & 1Mx18 Pipelined NtRAM
Note
This datasheet PDF includes multiple part numbers: K7N163631B, K7N161831B.
Please refer to the document for exact specifications by model.

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512Kx36 1Mx18 Pipelined NtRAM Samsung semiconductor
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