K7M323625M - 1Mx36 & 2Mx18 Flow-Through NtRAM

Product Overview

Samsung semiconductor

Part number	K7M323625M
Manufacturer	Samsung semiconductor
File Size	211.08 KB
Description	1Mx36 & 2Mx18 Flow-Through NtRAM
Datasheet	K7M323625M Datasheet
Additional preview pages of the K7M323625M datasheet.

The K7M323625M and K7M321825M are 37,748,736-bits Synchronous Static SRAMs.

3.3V+0.165V/-0.165V Power Supply.
I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
Byte Writable Function.
Enable clock and suspend operation.
Single READ/WRITE control pin.
Self-Timed Write Cycle.
Three Chip Enable for simple depth expansion with no data contention.
A interleaved burst or a linear burst mode.
Asynchronous output enable control.
Power Down mod.

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Published: Apr 7, 2005 |