K7M163635B 512Kx36 & 1Mx18 Flow-Through NtRAM

Samsung semiconductor

Description

K7M163635B K7M161835B 512Kx36 & 1Mx18 Flow-Through NtRAMTM 18Mb NtRAMTM Specification 100TQFP/165FBGA with Pb/Pb-Free (RoHS compliant) INFORMATION .
The K7M163635B and K7M161835B are 18,874,368-bits Synchronous Static SRAMs.

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Datasheet Specifications

Part number: K7M163635B
Manufacturer: Samsung semiconductor
File Size: 427.71 KB
Datasheet: K7M163635B_Samsungsemiconductor.pdf
Description: 512Kx36 & 1Mx18 Flow-Through NtRAM

Features

* VDD= 2.5 or 3.3V +/- 5% Power Supply.
* Byte Writable Function.
* Enable clock and suspend operation.
* Single READ/WRITE control pin.
* Self-Timed Write Cycle.
* Three Chip Enable for simple depth expansion with no data contention .
* A inte

Applications

* where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. www. DataSheet4U. com
* Samsung Electronics reserves the right to change products or specificati

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K7M163635B 512Kx36 1Mx18 Flow-Through NtRAM Samsung semiconductor

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