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K7A163631B 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB / PB-FREE

K7A163631B Description

K7A163631B K7A161831B www.DataSheet4U.com 512Kx36 & 1Mx18 Synchronous SRAM 18Mb B-die Sync.SRAM Specification 100TQFP with Pb & Pb-Free (RoHS comp.
The K7A163631B and K7A161831B are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium a.

K7A163631B Features

* Synchronous Operation.
* 2 Stage Pipelined operation with 4 Burst.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* VDD= 2.5 or 3.3V +/- 5% Power Supply.
* 5V Tolerant Inputs Except I/O Pins.

K7A163631B Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.

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Datasheet Details

Part number
K7A163631B
Manufacturer
Samsung semiconductor
File Size
405.57 KB
Datasheet
K7A163631B_Samsungsemiconductor.pdf
Description
18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB / PB-FREE

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18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB-FREE Samsung semiconductor
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