K6F2016V4D - CMOS SRAM

Samsung semiconductor

K6F2016V4D Description

K6F2016V4D Family CMOS SRAM Document Title 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No.History .

K6F2016V4D Features

* Process Technology: Full CMOS
* Organization: 128K x16 bit
* Power Supply Voltage: 3.0~3.6V
* Low Data Retention Voltage: 1.5V(Min)
* Three state output status and TTL Compati

📥 Download Datasheet

K6F2016V4D Datasheet Preview — Preview of K6F2016V4D PDF

Datasheet Details

Part number: K6F2016V4D
Manufacturer: Samsung semiconductor
File Size: 105.57 KB
Datasheet: K6F2016V4D-Samsungsemiconductor.pdf
Description: CMOS SRAM

📁 Related Datasheet

K6F1008R2M - SRAM (Samsung Electronics)
K6F1008S2M - SRAM (Samsung Electronics)
K6F1008V2M - SRAM (Samsung Electronics)
K6F4016R4G - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM (SAMSUNG Electronics)

📌 All Tags

CMOS SRAM Samsung semiconductor

Samsung semiconductor K6F2016V4D-like datasheet

K6F2016U4E - 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2016U4E-F - 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2016U4G - 2Mb(128K x 16 bit) Low Power SRAM
K6F2008T2E - 256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2008U2E-YF55 - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2008U2E-YF70 - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F2016V4D Stock/Price