Description
The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits.
Features
- Fast Access Time 10ns(Max. ).
- Low Power Dissipation Standby (TTL) : 20mA(Max. ) (CMOS) : 5mA(Max. ) Operating K6R4004C1D-10 : 65mA(Max. ) Single 5.0V±10% Power Supply.
- TTL Compatible Inputs and Outputs.
- Fully Static Operation - No Clock or Refresh required.
- Three State Outputs.
- Center Power/Ground Pin Configuration.
- Standard Pin Configuration K6R4004C1D-J : 32-SOJ-400.
- Operating in Commercial and Industrial Temperature range.
K64004C1D_Samsungsemiconductor.pdf