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K522H1HACF-B050 - 2Gb (128M x16) NAND Flash + 1Gb (64M x16 ) Mobile DDR SDRAM

K522H1HACF-B050 Description

Rev.1.0, Oct.2010 K522H1HACF-B050 MCP Specification 2Gb (128M x16) NAND Flash + 1Gb (64M x16 ) Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RES.
The K522H1HACF is a Multi Chip Package Memory which combines 2G bit NAND Flash and 1G bit Mobile DDR synchronous Dynamic RAM.

K522H1HACF-B050 Features

* Operating Temperature : -25°C ~ 85°C
* Package : 153ball FBGA Type - 8x9x1.0mmt, 0.5mm pitch
* Voltage Supply : 1.7V ~ 1.95V
* Organization - Memory Cell Array : (256M + 8M) x 8bit for 2Gb (512M + 16M) x 8bit for 4Gb DDP - Data Register : (2K +

K522H1HACF-B050 Applications

* where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. For updates or additional information about Samsung products, contact your nearest Samsung office.

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Datasheet Details

Part number
K522H1HACF-B050
Manufacturer
Samsung semiconductor
File Size
1.80 MB
Datasheet
K522H1HACF-B050_Samsungsemiconductor.pdf
Description
2Gb (128M x16) NAND Flash + 1Gb (64M x16 ) Mobile DDR SDRAM

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