K4X56163PE-LG - 16M x16 Mobile DDR SDRAM

Samsung semiconductor

K4X56163PE-LG Datasheet Preview — Preview of K4X56163PE-LG PDF

Datasheet Details

Part number	K4X56163PE-LG
Manufacturer	Samsung semiconductor
File Size	698.98 KB
Description	16M x16 Mobile DDR SDRAM
Datasheet	K4X56163PE-LG_Samsungsemiconductor.pdf

K4X56163PE-LG Product details

Description

SYMBOL CK, CK TYPE Input DESCRIPTION Mobile-DDR SDRAM Clock : CK and CK are differential clock inputs.All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK.Internal clock signals are derived from CK/CK.Clock Enable : CKE HIGH activates, and CKE LOW deactivates internal clock signals, and device input buffers and output drivers.Taking CKE LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operation (all banks idle), or ACTIVE PO

Features

Mobile-DDR SDRAM.
1.8V power supply, 1.8V I/O power.
Double-data-rate architecture; two data transfers per clock cycle.
Bidirectional data strobe(DQS).
Four banks operation.
Differential clock inputs(CK and CK).
MRS cycle with address key programs - CAS Latency ( 3 ) - Burst Length ( 2, 4, 8 ) - Burst Type (Sequential & Interleave) - Partial Self Refresh Type ( Full, 1/2, 1/4 array ) - Internal Temperature Compensated Self Refresh - Driver.

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Published: Apr 7, 2005 |