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K4S641632H-UC70 - 64Mb H-die SDRAM Specification 54 TSOP-II

Download the K4S641632H-UC70 datasheet PDF. This datasheet also covers the K4S641632H-UC60 variant, as both devices belong to the same 64mb h-die sdram specification 54 tsop-ii family and are provided as variant models within a single manufacturer datasheet.

Description

The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • DQM (x4,x8) & L(U)DQM (x16) for masking.
  • Auto & self refresh.
  • 64ms r.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4S641632H-UC60_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
K4S641632H 64Mb H-die SDRAM Samsung Electronics
K4S641632N 64Mb N-die SDRAM Samsung
K4S640832N 64Mb N-die SDRAM Samsung
K4S643232H-TC-L50 64Mb H-die (x32) SDRAM Samsung
K4S643232H-TC-L55 64Mb H-die (x32) SDRAM Samsung

Other Datasheets by Samsung Semiconductor

Part Number Description
K4S641632H-UC70 64Mb H-die SDRAM Specification 54 TSOP-II
K4S641632H-UC75 64Mb H-die SDRAM Specification 54 TSOP-II
K4S641632H-UC75 64Mb H-die SDRAM Specification 54 TSOP-II
K4S641632H-UC60 64Mb H-die SDRAM Specification 54 TSOP-II
K4S641632H-UC60 64Mb H-die SDRAM Specification 54 TSOP-II

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.3 August 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 August 2004 SDRAM 64Mb H-die (x4, x8, x16) Revision History Revision 1.0 (September, 2003) • Finalized CMOS SDRAM Revision 1.1 (October, 2003) Deleted speed -7C and AC parameter notes 5. Revision 1.2 (May, 2004) • Added Note 5. sentense of tRDL parameter Revision 1.3 (August, 2004) • Corrected typo. Rev. 1.3 August 2004 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 4M x 4Bit x 4 / 2M x 8Bit x 4 / 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • JEDEC standard 3.
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