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K4R881869M-NbCcG6 - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM

Product Overview

Samsung semiconductor

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K4R881869M-NbCcG6 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM by Samsung semiconductor - Datasheet Preview — Datasheet preview – K4R881869M-NbCcG6

Datasheet Details

Part number	K4R881869M-NbCcG6
Manufacturer	Samsung semiconductor
File Size	3.99 MB
Description	288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
Datasheet	K4R881869M-NbCcG6 Datasheet
Note	This datasheet PDF includes multiple part numbers: K4R881869M-NbCcG6, K4R. Please refer to the document for exact specifications by model.
Additional preview pages of the K4R881869M-NbCcG6 datasheet.

Product details

Description

Signal SIO1,SIO0 I/O I/O Type CMOSa # Pins 2 Description Serial input/output.

Features

for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage/bandwidth or for error correction. Preliminary Direct RDRAM™.

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Published: Apr 7, 2005 |