K4M64163PH - 1M x 16Bit x 4 Banks Mobile SDRAM

Samsung semiconductor

K4M64163PH Datasheet Preview — Preview of K4M64163PH PDF

Datasheet Details

Part number	K4M64163PH
Manufacturer	Samsung semiconductor
File Size	142.10 KB
Description	1M x 16Bit x 4 Banks Mobile SDRAM
Datasheet	K4M64163PH_Samsungsemiconductor.pdf

K4M64163PH Product details

Description

The K4M64163PH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

1.8V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR (Parti.

📁 K4M64163PH Similar Datasheet

K4M281633F - 2M x 16Bit x 4 Banks Mobile SDRAM (Samsung)
K4M281633F-C - 2M x 16Bit x 4 Banks Mobile SDRAM (Samsung)
K4M281633F-F1L - 2M x 16Bit x 4 Banks Mobile SDRAM (Samsung)
K4M281633F-G - 2M x 16Bit x 4 Banks Mobile SDRAM (Samsung)
K4M281633F-L - 2M x 16Bit x 4 Banks Mobile SDRAM (Samsung)
K4M281633F-N - 2M x 16Bit x 4 Banks Mobile SDRAM (Samsung)
K4M281633F-RE - 2M x 16Bit x 4 Banks Mobile SDRAM (Samsung)
K4M28163PF - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung)

Other Datasheets by Samsung semiconductor

K4M64163PK - 1M x 16Bit x 4 Banks Mobile SDRAM
K4M641633K - 1M x 16Bit x 4 Banks Mobile SDRAM
K4M28163LF - 2M x 16Bit x 4 Banks Mobile SDRAM
K4M28163LH - Mobile SDRAM
K4M28163PH - 2M x 16Bit x 4 Banks Mobile SDRAM
K4M283233H - 1M x 32Bit x 4 Banks Mobile SDRAM

Published: Mar 15, 2007 |