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K4M561633G - 4M x 16Bit x 4 Banks Mobile SDRAM

Samsung semiconductor

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Datasheet Details

Part number: K4M561633G
Manufacturer: Samsung semiconductor
File Size: 152.68 KB
Datasheet: K4M561633G_Samsungsemiconductor.pdf
Description: 4M x 16Bit x 4 Banks Mobile SDRAM

K4M561633G Product details

Description

The K4M561633G is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with

Features

3.0V & 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). www. DataSheet4U. com.
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Functi.

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16Bit Banks Mobile SDRAM Samsung semiconductor

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K4M561633G Stock/Price