K4M283233H - 1M x 32Bit x 4 Banks Mobile SDRAM

Samsung semiconductor

K4M283233H Datasheet Preview — Preview of K4M283233H PDF

Datasheet Details

Part number	K4M283233H
Manufacturer	Samsung semiconductor
File Size	169.02 KB
Description	1M x 32Bit x 4 Banks Mobile SDRAM
Datasheet	K4M283233H_Samsungsemiconductor.pdf

K4M283233H Product details

Description

The K4M283233H is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

3.0V & 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR.

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Published: Feb 4, 2007 |