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K1S321615M - 2Mx16 bit Uni-Transistor Random Access Memory

General Description

The K1S321615M is fabricated by SAMSUNG’ s advanced CMOS technology using one transistor memory cell.

The device support, extended temperature range and 48 ball Chip Scale Package for user flexibility of system design.

The device also supports deep power down mode for low standby current.

Key Features

  • www. DataSheet4U. com UtRAM.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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K1S321615M Document Title 2Mx16 bit Uni-Transistor Random Access Memory www.DataSheet4U.com UtRAM Revision History Revision No. History 0.0 Initial Draft - Design target Revised - Change package type from FBGA to TBGA. - Improve operating current from 30mA to 25mA. - Change input and output reference voltage from 1.1V to 1.5V at AC test condition. - Expand max operating voltage from 3.0V to 3.3V. - Expand max operating temperature from 70°C to 85°C. - Release speed from 70/85ns to 100ns. - Release standby current form 170µA to 200µA. - Add Power up timing diagram. - Add AC characteristics for continuous write. Finalize - Release standby current form 200µA to 250µA. - Release deep power down current form 10µA to 20µA. - Release tWC for continuous write operation from 100ns to 110ns.