M53230400CB0 Datasheet (Samsung Semiconductor) - (M532304x0CB0/CW0) DRAM Module

M53230400CB0, (M532304x0CB0/CW0) DRAM Module

The Samsung M5323040(1)0C is a 4Mx32bits Dynamic RAM high density memory module.

The Samsung M5323040(1)0C consists of eight CMOS 4Mx4bits DRAMs in 24-pin SOJ package mounted on a 72-pin glass-epoxy substrate.

A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM

M53230400CB0 Features

* Part Identification - M53230400CW0-C(4096 cycles/64ms Ref, SOJ, Solder) - M53230400CB0-C(4096 cycles/64ms Ref, SOJ, Gold) - M53230410CW0-C(2048 cycles/32ms Ref, SOJ, Solder) - M53230410CB0-C(2048 cycles/32ms Ref, SOJ, Gold)

* Extended Data Out

* CAS-before-RAS refresh capab