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M53230224CJ2 - (M53230224CE2/CJ2) DRAM Module

Download the M53230224CJ2 datasheet PDF. This datasheet also covers the M53230224CE2 variant, as both devices belong to the same (m53230224ce2/cj2) dram module family and are provided as variant models within a single manufacturer datasheet.

Description

The Samsung M53230224D is a 2Mx32bits Dynamic RAM high density memory module.

The Samsung M53230224D consists of four CMOS 1Mx16bits DRAMs in 42-pin SOJ package mounted on a 72-pin glass-epoxy substrate.

A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.

Features

  • Part Identification - M53230224CE2-C(1024 cycles/16ms Ref, SOJ, Solder) - M53230224CJ2-C(1024 cycles/16ms Ref, SOJ, Gold).
  • Extended Data Out.
  • CAS-before-RAS refresh capability.
  • RAS-only and Hidden refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V±10% power supply.
  • JEDEC standard PDPin & pinout.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M53230224CE2_SamsungSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com DRAM MODULE M53230224CE2/CJ2 Extended Data Out 2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V GENERAL DESCRIPTION The Samsung M53230224D is a 2Mx32bits Dynamic RAM high density memory module. The Samsung M53230224D consists of four CMOS 1Mx16bits DRAMs in 42-pin SOJ package mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The M53230224D is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.
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