KMM5364103CK Datasheet (Samsung Semiconductor) - (KMM5364103CK / KMM5364003CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas

KMM5364103CK, (KMM5364103CK / KMM5364003CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas

The Samsung KMM53640(1)03CK is a 4Mx36bits Dynamic RAM high density memory module.

The Samsung KMM53640(1)03CK consists of eight CMOS 4Mx4bits DRAMs in 24-pin SOJ package and one CMOS 4Mx4 bit Quad CAS DRAM in 28-pin SOJ package mounted on a 72-pin glassepoxy substrate.

A 0.1 or 0.22uF decoupling ca

DRAM MODULE KMM5364003CK/CKG KMM5364103CK/CKG 4Byte 4Mx36 SIMM (4Mx4 & 16M Quad CAS base) Revision 0.1 Nov.

1997 DRAM MODULE Revision History Version 0.1 (Nov.

1997) Changed the mode of parity check component from EDO to FP, refer to KMM5364003CK/CKG KMM5364103CK/CKG PACKAGE DIMENSIONS and GENERAL DISCRIPTION.

DRAM MODULE KMM5364003CK/CKG KMM5364103CK/CKG KMM5364003CK/CKG & KMM5364103CK/CKG with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GE

KMM5364103CK Features

* Part Identification - KMM5364003CK(4096 cycles/64ms Ref, SOJ, Solder) - KMM5364003CKG(4096 cycles/64ms Ref, SOJ, Gold) - KMM5364103CK(2048 cycles/32ms Ref, SOJ, Solder) - KMM5364103CKG(2048 cycles/32ms Ref, SOJ, Gold)

* Fast Page Mode Operation

* CAS-before-RAS refresh capa