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KMM53632000BK - DRAM MODULE

Description

The Samsung KMM53632000B is a 32Mx36bits Dynamic RAM high density memory module.

The Samsung KMM53632000B consists of sixteen CMOS 16Mx4bits and eight CMOS 16Mx1bit DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate.

Features

  • Part Identification - KMM53632000BK(4K cycles/64ms Ref, SOJ, Solder) - KMM53632000BKG(4K cycles/64ms Ref, SOJ, Gold).
  • Fast Page Mode Operation.
  • CAS-before-RAS & Hidden Refresh capability.
  • RAS-only refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V±10% power supply.
  • JEDEC standard PDpin & pinout.
  • PCB : Height(1420mil), double sided component.

📥 Download Datasheet

📁 Similar Datasheet

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Other Datasheets by Samsung Semiconductor

Part Number Description
KMM53632000CK 32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1
KMM53632004BK 32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1
KMM53632004CK 32MBx36 DRAM Simm Using 16MBx4 & 16MBx1
KMM5361203C2W 1MBx36 DRAM Simm Using 1MBx16 And 1MBx4 Quad Cas
KMM5361205C2W 1MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DRAM MODULE KMM53632000BK/BKG KMM53632000BK/BKG Fast Page Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53632000B is a 32Mx36bits Dynamic RAM high density memory module. The Samsung KMM53632000B consists of sixteen CMOS 16Mx4bits and eight CMOS 16Mx1bit DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM53632000B is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.