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KMM5328004CSW - 8MB X 32 DRAM Simm Using 4MB X 16

Description

The Samsung KMM5328004C is a 8Mx32bits Dynamic RAM high density memory module.

The Samsung KMM5328004C consists of four CMOS 4Mx16bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate.

A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.

Features

  • Part Identification - KMM5328004CSW(4K cycles/64ms Ref, TSOP, Solder) - KMM5328004CSWG(4K cycles/64ms Ref, TSOP, Gold).
  • Extended Data Out Mode Operation.
  • CAS-before-RAS & Hidden Refresh capability.
  • RAS-only refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V±10% power supply.
  • JEDEC standard PDpin & pinout.
  • PCB : Height(1000mil), double sided component.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DRAM MODULE KMM5328004CSW/CSWG 4Byte 8Mx32 SIMM (4Mx16 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5328004CSW/CSWG DRAM MODULE KMM5328004CSW/CSWG EDO Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM5328004C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung KMM5328004C consists of four CMOS 4Mx16bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5328004C is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.
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