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KMM53216004BK - 16MBx32 DRAM Simm Using 16MBx4

Description

The Samsung KMM53216004B is a 16Mx32bits Dynamic RAM high density memory module.

The Samsung KMM53216004B consists of eight CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate.

A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.

Features

  • Part Identification - KMM53216004BK(4K cycles/64ms Ref, SOJ, Solder) - KMM53216004BKG(4K cycles/64ms Ref, SOJ, Gold).
  • Extended Data Out Mode Operation.
  • CAS-before-RAS & Hidden Refresh capability.
  • RAS-only refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V±10% power supply.
  • JEDEC standard PDpin & pinout.
  • PCB : Height(1250mil), double sided component.

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Other Datasheets by Samsung Semiconductor

Part Number Description
KMM53216004CK 16MBx32 DRAM Simm Using 16MBx4
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DRAM MODULE KMM53216004BK/BKG EDO Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53216004B is a 16Mx32bits Dynamic RAM high density memory module. The Samsung KMM53216004B consists of eight CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM53216004B is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.