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KMM466F404BS2-L - 4M X 64 DRAM SODIMM

Description

The Samsung KMM466F404BS2-L is a 4Mx64bits Dynamic RAM high density memory module.

The Samsung KMM466F404BS2-L consists of four CMOS 4Mx16bits DRAMs in TSOP 400mil packages and a 2K EEPROM in 8www.DataSheet4U.com pin TSSOP package mounted on a 144-pin glass-epoxy substrate.

Features

  • Part Identification - KMM466F404BS2-L(4096 cycles/128ms, TSOP, L-ver).
  • Extended Data Out Mode Operation.
  • New JEDEC standard proposal with EEPROM.
  • Serial Presense Detect with EEPROM.
  • CAS-before-RAS Refresh capability.
  • Self -refresh capability.
  • RAS-only and Hidden refresh capability.
  • LVTTL compatible inputs and outputs.
  • Single +3.3V± 0.3V power supply.
  • PCB : Height(1000mil), double sided component.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DRAM MODULE KMM466F404BS2-L KMM466F404BS2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION The Samsung KMM466F404BS2-L is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM466F404BS2-L consists of four CMOS 4Mx16bits DRAMs in TSOP 400mil packages and a 2K EEPROM in 8www.DataSheet4U.com pin TSSOP package mounted on a 144-pin glass-epoxy substrate. A 0.1uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM466F404BS2-L is a Small Out-line Dual in-line Memory Module and is intended for mounting into 144 pin edge connector sockets.
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