K9MDG08U5M - FLASH MEMORY

Samsung Electronics

Datasheet Details

Part number	K9MDG08U5M
Manufacturer	Samsung Electronics
File Size	1.49 MB
Description	FLASH MEMORY
Datasheet	K9MDG08U5M_SamsungElectronics.pdf

Offered in 4Gx8bit, the K9LBG08U0M is a 32G-bit NAND Flash Memory with spare 1G-bit.

Voltage Supply : 2.7 V ~ 3.6 V.
Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit.
Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (512K + 16K)Byte.
Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 60µs(Max. ) - Serial Access : 25ns(Min. ).
K9MDG08U5M: 50ns(Min. ).
Memory Cell : 2bit / Memory Cell.
Fast Write Cycle Time - Program time : 800µs(Typ. ) - Block Er.

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Published: Sep 7, 2010 |