K9KAG08U1M - FLASH MEMORY

Samsung Electronics

Datasheet Details

Part number	K9KAG08U1M
Manufacturer	Samsung Electronics
File Size	1.37 MB
Description	FLASH MEMORY
Datasheet	K9KAG08U1M_SamsungElectronics.pdf

Offered in 1Gx8bit, the K9F8G08X0M is a 8G-bit NAND Flash Memory with spare 256M-bit.

Voltage Supply - 2.7V Device(K9F8G08B0M) : 2.5V ~ 2.9V - 3.3V Device(K9F8G08U0M) : 2.7V ~ 3.6V.
Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (4K + 128) x 8bit.
Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (256K + 8K)Byte.
Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 25µs(Max. ) - Serial Access : 25ns(Min. ).
Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase.

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Published: Sep 13, 2010 |