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K4H1G0738B - DDR SDRAM stacked 1Gb B-die (x4/x8)

Download the K4H1G0738B datasheet PDF. This datasheet also covers the K4H1G0638B variant, as both devices belong to the same ddr sdram stacked 1gb b-die (x4/x8) family and are provided as variant models within a single manufacturer datasheet.

Description

DDR SDRAM st.128Mb x 8 st.256Mb x 4 VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ NC DQ3 VSSQ NC NC VDDQ NC NC VDD NC NC WE CAS RAS CS0 CS1 BA0 BA1 AP/A10 A0 A1 A2 A3 VDD VDD NC VDDQ NC DQ0 VSSQ NC NC VDDQ NC DQ1 VSSQ NC NC VDDQ NC NC VDD NC NC WE CAS RAS CS0 CS1 BA0 BA1 AP/A10 A0 A1 A2 A3 VDD 1 2 3 4 5 6

Features

  • Double-data-rate architecture; two data transfers per clock cycle.
  • Bidirectional data strobe DQS.
  • Four banks operation.
  • Differential clock inputs(CK and CK).
  • DLL aligns DQ and DQS transition with CK transition.
  • MRS cycle with address key programs -. Read latency 2, 2.5 (clock) -. Burst length (2, 4, 8) -. Burst type (sequential & interleave).
  • All inputs except data & DM are sampled at the positive going edge of the system clock(CK).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4H1G0638B_SamsungElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number K4H1G0738B
Manufacturer Samsung Electronics
File Size 237.59 KB
Description DDR SDRAM stacked 1Gb B-die (x4/x8)
Datasheet download datasheet K4H1G0738B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com DDR SDRAM stacked 1Gb B-die (x4/x8) DDR SDRAM Stacked 1Gb B-die DDR SDRAM Specification (x4/x8) Revision 1.1 Rev. 1.1 August. 2003 www.DataSheet4U.com DDR SDRAM stacked 1Gb B-die (x4/x8) st. 1Gb B-die Revision History Revision 0.0 (May, 2003) - First version for internal review. Revision 1.0 (June, 2003) - Deleted "B3" speed. Revision 1.1 (August, 2003) - Corrected typo. DDR SDRAM Rev. 1.1 August. 2003 www.DataSheet4U.com DDR SDRAM stacked 1Gb B-die (x4/x8) Key Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe DQS • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (clock) -.
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